"f.Lithography equipment as follows:- 1.Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following:
- a.A light source wavelength shorter than 193 nm; or
- b.Capable of producing a pattern with a 'Minimum Resolvable Feature size' (MRF) of 45 nm or less;
Technical Note:The 'Minimum Resolvable Feature size' (MRF) is calculated by the following formula:
where the K factor = 0,35
- 2.Imprint lithography equipment capable of producing features of 45 nm or less;Note:3B001.f.2. includes:
- Micro contact printing tools
- Hot embossing tools
- Nano-imprint lithography tools
- Step and flash imprint lithography (S-FIL) tools
- 3.Equipment specially designed for mask making having all of the following:
- a.A deflected focussed electron beam, ion beam or "laser" beam; and
- b.Having any of the following:
- 1.A full-width half-maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or
- 2.Not used;
- 3.A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask;
- 4.Equipment designed for device processing using direct writing methods, having all of the following:
- a.A deflected focused electron beam; and
- b.Having any of the following:
- 1.A minimum beam size equal to or smaller than 15 nm; or
- 2.An overlay error less than 27 nm (mean + 3 sigma);".